| PART |
Description |
Maker |
| P6KE39A P6KE9.1CA P6KE51CA P6KE300A P6KE300CA P6KE |
16-Bit Bus Transceivers and Registers with 3-State Outputs 56-SSOP -40 to 85 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
RF Down-Converter 20-QFN 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
Presettable Synchronous 4-Bit Up/Down Binary Counters 16-SOIC -40 to 85 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
2.5-V 460-Kbps RS-232 Transceiver With /-15-kV ESD Protection 20-TSSOP 0 to 70
600 Watt Transient Voltage Suppressors
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Microsemi
|
| QIS0660001 |
Single IGBT H-Series Hermetic Module (600 Amperes/600 Volts)
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| QIS0660004 |
Single IGBTMOD NX-Series Module 600 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| CM600DY-12NF |
Dual IGBTMOD NF-Series Module 600 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| FRS-R-15/100 |
Fusetron?600 V Class RK5, FRS-R ?600 Vac/300 Vdc, 1/10-60 A, dual element, time-delay fuses
|
Cooper Bussmann, Inc.
|
| SDR656CTMZ SDR656CTM SDR656CTZ |
40 A, 600 V, SILICON, RECTIFIER DIODE, TO-254AA
40AMPS 600 VOLTS 30 nsec HYPER FAST CENTERTAP RECTIFIER
|
SOLID STATE DEVICES INC
SSDI[Solid States Devices, Inc]
|
| NDL5551 NDL5551P NDL5551P1C NDL5551P1D NDL5551P2C |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE 1 000 600 nm的光纤通信50毫米的铟镓砷雪崩光电二极管模
|
NEC, Corp.
NEC[NEC]
|
| CC2406020N CN2406020N CC24020N CC2403020N CN24020N |
Super Fast Recovery Dual Diode Modules 20 Amperes/300-600 Volts 20 A, 600 V, SILICON, RECTIFIER DIODE
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| APT150GN60JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 600; VCE(sat) (V): 1.4; IC (A): 123; 220 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Advanced Power Technology
|
| MCP6141-I/P MCP6143T-E/CH MCP6141T-E/OT |
600 nA, Non-Unity Gain Rail-to-Rail Input/Output Op Amps 600 nA的，非统一增益轨到轨输输出运算放大
|
Microchip Technology Inc.
Microchip Technology, Inc.
|
| CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT
Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
